丝印：5C；Package：SOT353-1；Low-power 2-input EXCLUSIVE-OR gate with voltage-level translator

1. General description The 74AUP1T86 provides the single 2-input EXCLUSIVE-OR function. This device ensures a very low static and dynamic power consumption across the entire VCC range from 2.3 V to 3.6 V. The 74AUP1T86 is designed for logic-level translation applications with input switching le

文件：236.49 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：5C；Package：SOT1226-3；Low-power 2-input EXCLUSIVE-OR gate with voltage-level translator

1. General description The 74AUP1T86 provides the single 2-input EXCLUSIVE-OR function. This device ensures a very low static and dynamic power consumption across the entire VCC range from 2.3 V to 3.6 V. The 74AUP1T86 is designed for logic-level translation applications with input switching le

文件：236.49 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：5C；Package：SOD-323；SMD ESD Protection Diode

Features - Unidirectional & bidirectional configurations. - Protects one power or I/O port. - Low clamping voltage. - AEC-Q101 Qualified. - ESD protection > 30kV

文件：462.15 Kbytes 页数：4 Pages

COMCHIP

典琦

丝印：5C；Package：SOT-23；Ldeally suited for automatic insertion

FEATURES ·Ldeally suited for automatic insertion ·epitaxial planar die construction ·complementary NPN type available(BC817)

文件：555.56 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

丝印：5C；Package：SOT-23；Small Signal Transistors (PNP)

Features • PNP Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier applications. • Especially suited for automatic insertion in thick and thin-film circuits. • These transistors are subdivided into three groups (-16, -25, and -40) according to their current gain. • As c

文件：228.56 Kbytes 页数：5 Pages

GE

GE Industrial Company

丝印：5C；Package：SOT-23；General Purpose Transistors(PNP Silicon)

General Purpose Transistors PNP Silicon Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：59.24 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

丝印：5C；Package：SOT-23；General Purpose Transistors

General Purpose Transistors PNP Silicon Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：124.39 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：5C；Package：SOT23；45 V, 500 mA PNP general-purpose transistors

Features and benefits • High current • Three current gain selections • Qualified according to AEC-Q101 and recommended for use in automotive applications

文件：302.06 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：5C；Package：SOT323；45 V, 500 mA PNP general-purpose transistors

Features and benefits • High current • Three current gain selections

文件：316.5 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：5C；Package：SOT323；45 V, 500 mA PNP general-purpose transistors

Features and benefits • High current • Three current gain selections • Qualified according to AEC-Q101 and recommended for use in automotive applications

文件：308.26 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司