5.0V 32K x 8 Asynchronous Static RAM

The 5962-88662 (71256 SRAM) is organized as 32K x 8.This part offers a reduced power standby mode for significant system level power and cooling savings.Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. High-speed address/chip select time– 25/35/45/55/70/100ns (max.)\nLow-power operation \nInput and output directly TTL-compatible\nAvailable in standard 28-pin (300 or 600 mil) ceramic DIP\nMilitary product compliant to MIL-STD-883, Class B;

Renesas

瑞萨

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 32K X 8 STATIC RAM (SRAM), MONOLITHIC SILICON

文件：170.33 Kbytes 页数：22 Pages

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Package：28-CDIP（0.600"，15.24mm）；包装：托盘 类别：集成电路（IC） 存储器 描述：IC SRAM 256KBIT PARALLEL 28CDIP

Renesas Electronics America Inc

Package：28-CDIP（0.300"，7.62mm）；包装：托盘 类别：集成电路（IC） 存储器 描述：IC SRAM 256KBIT PARALLEL 28CDIP

Renesas Electronics America Inc

Package：28-CDIP（0.600"，15.24mm）；包装：托盘 类别：集成电路（IC） 存储器 描述：IC SRAM 256KBIT PARALLEL 28CDIP

Renesas Electronics America Inc