型号：74AUP1Z125GM；Package：SOT886；Low-power X-tal driver with enable and internal resistor; 3-state

1. General description The 74AUP1Z125 is a crystal driver with enable, internal resistor and 3-state output. When not in use the EN input can be driven HIGH, putting the device in a low power disable mode with X1 pulled HIGH via RPU, X2 set LOW and Y in the high impedance OFF-state. In disable

文件：331.69 Kbytes 页数：23 Pages

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型号：74AUP1Z125GN；Package：SOT1115；Low-power X-tal driver with enable and internal resistor; 3-state

1. General description The 74AUP1Z125 is a crystal driver with enable, internal resistor and 3-state output. When not in use the EN input can be driven HIGH, putting the device in a low power disable mode with X1 pulled HIGH via RPU, X2 set LOW and Y in the high impedance OFF-state. In disable

文件：331.69 Kbytes 页数：23 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：74AUP1Z125GS；Package：SOT1202；Low-power X-tal driver with enable and internal resistor; 3-state

1. General description The 74AUP1Z125 is a crystal driver with enable, internal resistor and 3-state output. When not in use the EN input can be driven HIGH, putting the device in a low power disable mode with X1 pulled HIGH via RPU, X2 set LOW and Y in the high impedance OFF-state. In disable

文件：331.69 Kbytes 页数：23 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：74AUP1Z125GW；Package：SOT363-2；Low-power X-tal driver with enable and internal resistor; 3-state

1. General description The 74AUP1Z125 is a crystal driver with enable, internal resistor and 3-state output. When not in use the EN input can be driven HIGH, putting the device in a low power disable mode with X1 pulled HIGH via RPU, X2 set LOW and Y in the high impedance OFF-state. In disable

文件：331.69 Kbytes 页数：23 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：BZX84-A3V9；Package：SOT23；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX84-A), ±2 (BZX84-B) and approximately ±5 (BZX84-C) tolerance range. The series includes 37 breakdown volt

文件：324 Kbytes 页数：14 Pages

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型号：CPDV5V0A-HF；Package：SOD-323；SMD ESD Protection Diode

Features - Peak power dissipation: 400W (8/20μs). - Working voltages: 5V. - Low leakage current. - Low capacitance. - Protects one directional I/O line. - Low clamping voltage. - IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact). - IEC61000-4-4 (EFT) 40A (5/50ns).

文件：470.91 Kbytes 页数：4 Pages

典琦

型号：EDZ16B；Package：EMD2；Zener diode

Features 1) Extremely compact, 2-pin mini-mold type for highdensity mounting (EMD2). 2) Can be mounted automatically,using chip mounter. 3) High reliability. Applications Constant voltage control

文件：162.8 Kbytes 页数：5 Pages

罗姆

型号：FSD273TA；Package：SOT-323；SILICON LOW VOLTAGE HYPERABRUPT VARACTOR DIODES

Device Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics, low voltage operation and high Q. Low reverse current ensures very low phase noise performance. These parts can be used with control voltages from 0

文件：62.14 Kbytes 页数：6 Pages

型号：MT6L78FS；Package：fS6；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

东芝

型号：PDTA114YU；Package：SC-70；PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k

Features and benefits * 100 mA output current capability * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs * AEC-Q101 qualified

文件：863.35 Kbytes 页数：18 Pages

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