丝印：551；Package：SOD-323；SURFACE MOUNT SCHOTTKY DIODE

FEATURES Ultra low Vf Low capacitance for reduced insertion loesses Reverse voltage rating of 30V Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard APPLICATIONS Mobile phones and accessories Hand-held computers High speed switching applications

文件：354.54 Kbytes 页数：5 Pages

PANJIT

強茂

丝印：551；RoHS Compliant Halogen Free REACH Compliant

文件：1.3526 Mbytes 页数：10 Pages

LEIDITECH

雷卯电子

丝印：551；RoHS Compliant Halogen Free REACH Compliant

文件：1.3526 Mbytes 页数：10 Pages

LEIDITECH

雷卯电子

丝印：551；Package：SOD-323；SURFACE MOUNT SCHOTTKY DIODES

文件：141.91 Kbytes 页数：5 Pages

PANJIT

強茂

丝印：55190IBZ；Package：SOIC；Single and Dual Ultra-Low Noise, Ultra-Low Distortion, Low Power Op Amp

Features • 1.2nV/Hz input voltage noise, fO = 1kHz • Harmonic Distortion -95dBc, -92dBc, fO = 4MHz • Stable at gains as low as 5 • 800MHz gain bandwidth product (AV = 5) • 268V/μs typical slew rate • 16mA typical supply current (21μA in disable mode) • 300μV typical offset voltage • 25μA

文件：1.23534 Mbytes 页数：18 Pages

RENESAS

瑞萨

丝印：55190IBZ；Package：SOIC；Single and Dual Ultra-Low Noise, Ultra-Low Distortion, Low Power Op Amp

Features • 1.2nV/Hz input voltage noise, fO = 1kHz • Harmonic Distortion -95dBc, -92dBc, fO = 4MHz • Stable at gains as low as 5 • 800MHz gain bandwidth product (AV = 5) • 268V/μs typical slew rate • 16mA typical supply current (21μA in disable mode) • 300μV typical offset voltage • 25μA

文件：1.23534 Mbytes 页数：18 Pages

RENESAS

瑞萨

丝印：55191IBZ；Package：SOIC；Single and Dual Ultra-Low Noise, Ultra-Low Distortion, Rail-to-Rail, Low Power Op

Features • 1.3nV/Hz input voltage noise, fO = 1kHz • Harmonic Distortion -94dBc, -104dBc, fO = 1MHz • Stable at gains as low as 10 • 800MHz gain bandwidth product (AV = 10) • 260V/μs slew rate • 6.1mA supply current (21μA in disable mode) • 800μV maximum offset voltage • 12μA input bias c

文件：1.17099 Mbytes 页数：18 Pages

RENESAS

瑞萨

丝印：55191IBZ；Package：SOIC；Single and Dual Ultra-Low Noise, Ultra-Low Distortion, Rail-to-Rail, Low Power Op

Features • 1.3nV/Hz input voltage noise, fO = 1kHz • Harmonic Distortion -94dBc, -104dBc, fO = 1MHz • Stable at gains as low as 10 • 800MHz gain bandwidth product (AV = 10) • 260V/μs slew rate • 6.1mA supply current (21μA in disable mode) • 800μV maximum offset voltage • 12μA input bias c

文件：1.17099 Mbytes 页数：18 Pages

RENESAS

瑞萨

丝印：551C；Package：SOIC；LinCMOSE TIMERS

Very Low Power Consumption 1 mW Typ at VDD = 5 V Capable of Operation in Astable Mode CMOS Output Capable of Swinging Rail to Rail High Output-Current Capability Sink 100 mA Typ Source 10 mA Typ Output Fully Compatible With CMOS, TTL, and MOS Low Supply Current Reduces Spikes During Out

文件：356.46 Kbytes 页数：18 Pages

TI

德州仪器

丝印：551C；Package：SOIC；LinCMOSE TIMERS

Very Low Power Consumption 1 mW Typ at VDD = 5 V Capable of Operation in Astable Mode CMOS Output Capable of Swinging Rail to Rail High Output-Current Capability Sink 100 mA Typ Source 10 mA Typ Output Fully Compatible With CMOS, TTL, and MOS Low Supply Current Reduces Spikes During Out

文件：356.46 Kbytes 页数：18 Pages

TI

德州仪器