丝印：51；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES For surface mounted applications in order tooptimize board space. Low profile package. Glass passivated junction. Low inductance. 3000W peak pulse power capability at 10x1000us waveform, repetition rate (duty cycles):0.01 Plastic package has Underwriters Laboratory Flammability.

文件：325.35 Kbytes 页数：5 Pages

YFWDIODE

佑风微

丝印：51；Package：SOT-23；Low Leakage Current

FEATURES ● Low Leakage Current ● High Switching Speed APPLICATION ● Low-leakage Current Applications in Surface Mounted Circuits

文件：744.57 Kbytes 页数：3 Pages

LEIDITECH

雷卯电子

丝印：51；Package：SOT23；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX84-A), ±2 (BZX84-B) and approximately ±5 (BZX84-C) tolerance range. The series includes 37 breakdown volt

文件：324 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：51；Package：3-4E1S；Zener Diode Silicon Epitaxial Planar

Applications • Surge absorber Features (1) Power dissipation : PD = 2W (2) Zener voltage : Vz = 12 to 51V (3) The use of small, thin surface-mount package is optimum way for high-density mounting. Nickname: M-FLATTM

文件：266.72 Kbytes 页数：6 Pages

TOSHIBA

东芝

丝印：51；Package：MELF；500mW SURFACE MOUNT ZENER DIODE

Planar Die Construction 500mW Power Dissipation 2.0 – 56V Nominal Zener Voltage Ideally Suited for Automated Assembly For Use in Voltage Stabilizer or Reference

文件：65.93 Kbytes 页数：6 Pages

WTE

Won-Top Electronics

丝印：51；Package：SOT666；60 V, 1 A PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High efficiency leading to less heat generation * Reduces printed-circuit board area required * Cost effective replacement for medium power transistors BCP52 and BCX52

文件：267.59 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：51；Package：SC-59A；NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ

Features * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs

文件：260.769 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：51；Package：SC-70；NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ

Features * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs

文件：260.769 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：51；Package：SC-70；50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ

1. General description NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA124XU 2. Features and benefits • Built-in bias resistors • Simplifies circuit design • Reduces component count • Reduces pick and

文件：197.63 Kbytes 页数：9 Pages

NEXPERIA

安世

丝印：51；Package：SOD-523；SCHOTTKY BARRIER RECTIFIER

Features Low forward voltage drop Deal for automated placement Low power loss, high efficiency High surge current capability Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard AEC-Q101 qualified

文件：169 Kbytes 页数：5 Pages

PANJIT

強茂