Bipolar Transistor -50V, -0.4A, Low VCE(sat) PNP Single SSFP

Bipolar Transistor –50V, –0.4A, Low VCE(sat) PNP Single SSFP Features • Large current capacity • Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=210mΩ[IC=0.5A, IB=50mA] • Ultrasmall package facilitates miniaturization in end products • Small ON-resistance (Ron) Appli

文件：515.59 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Low-Frequency General-Purpose Amplifier Applications

PNP Epitaxial Planar Silicon Transistor Features • Large current capacitance. • Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=210mΩ [IC=0.5A, IB=50mA]. • Ultrasmall package facilitates miniaturization in end products. • Small ON-resistance (Ron). Applications

文件：34.42 Kbytes 页数：4 Pages

SANYO

三洋

Bipolar Transistor -50V, -0.4A, Low VCE(sat) PNP Single SSFP

Bipolar Transistor –50V, –0.4A, Low VCE(sat) PNP Single SSFP Features • Large current capacity • Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=210mΩ[IC=0.5A, IB=50mA] • Ultrasmall package facilitates miniaturization in end products • Small ON-resistance (Ron) Appli

文件：515.59 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

双极晶体管，-50V，-0.4A，低饱和压，PNP 单 SSFP

50A02SS is Bipolar Transistor, -50V, -0.4A, Low VCE(sat), PNP Single SSFP for Low-Frequency General-Purpose Amplifi er Applications. • Large current capacity\n• Ultrasmall package facilitates miniaturization in end products\n• Small ON-resistance (Ron);

ONSEMI

安森美半导体

Package：SC-81；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 50V 0.4A 3SSFP

ONSEMI

安森美半导体