丝印：4N1；Package：ESV；200 mA CMOS Low Dropout Regulator with Fast Load Transient Response

The TCR2EF and TCR2EE series are CMOS single output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and fast load transient response. These voltage regulators are available in fixed output voltages between 1.0 V and 5.0 V and capable of

文件：1.52347 Mbytes 页数：17 Pages

TOSHIBA

东芝

丝印：4N1；Package：SMV；200 mA CMOS Low Dropout Regulator with Fast Load Transient Response

The TCR2EF and TCR2EE series are CMOS single output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and fast load transient response. These voltage regulators are available in fixed output voltages between 1.0 V and 5.0 V and capable of

文件：1.52347 Mbytes 页数：17 Pages

TOSHIBA

东芝

丝印：4N150；Package：TO-3PF；N-channel 1500 V, 5 廓, 4 A, PowerMESH??Power MOSFET in TO-220, TO-247, TO-3PF

文件：762.25 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：UTC4N100；Package：TO-220；null4.0A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 4N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 6.0 Ω @ VGS=10V, ID=2.0A * Low Reverse Transfer Capacitance * Fast Switching Capabi

文件：621.96 Kbytes 页数：9 Pages

UTC

友顺

丝印：UTC4N100；Package：TO-220F1；null4.0A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 4N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 6.0 Ω @ VGS=10V, ID=2.0A * Low Reverse Transfer Capacitance * Fast Switching Capabi

文件：621.96 Kbytes 页数：9 Pages

UTC

友顺

丝印：UTC4N100；Package：TO-220F2；null4.0A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 4N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 6.0 Ω @ VGS=10V, ID=2.0A * Low Reverse Transfer Capacitance * Fast Switching Capabi

文件：621.96 Kbytes 页数：9 Pages

UTC

友顺

丝印：UTC4N100；Package：TO-220F；null4.0A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 4N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 6.0 Ω @ VGS=10V, ID=2.0A * Low Reverse Transfer Capacitance * Fast Switching Capabi

文件：621.96 Kbytes 页数：9 Pages

UTC

友顺

丝印：UTC4N100；Package：TO-220；null4.0A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 4N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 6.0 Ω @ VGS=10V, ID=2.0A * Low Reverse Transfer Capacitance * Fast Switching Capabi

文件：621.96 Kbytes 页数：9 Pages

UTC

友顺

丝印：UTC4N100；Package：TO-220F1；null4.0A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 4N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 6.0 Ω @ VGS=10V, ID=2.0A * Low Reverse Transfer Capacitance * Fast Switching Capabi

文件：621.96 Kbytes 页数：9 Pages

UTC

友顺

丝印：UTC4N100；Package：TO-220F2；null4.0A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 4N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 6.0 Ω @ VGS=10V, ID=2.0A * Low Reverse Transfer Capacitance * Fast Switching Capabi

文件：621.96 Kbytes 页数：9 Pages

UTC

友顺