丝印：4H1；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: • DC-DC Converters • Power Management Functions • Battery Operated Systems and Solid-State Relays • D

文件：620.44 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：4H1；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: • DC-DC Converters • Power Management Functions • Battery Operated Systems and Solid-State Relays • D

文件：620.44 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：4H11G；Package：LFPAK4；Power Transistor 80 V, 8 A Dual General Purpose NPN

Designed for general purpose power and switching applications such as regulators, converters and power amplifiers. Housed in advanced LFPAK package (5 x 6 mm) with excellent thermal conduction. Automotive end applications include air bag deployment, power train control units, and instrument cl

文件：1.66812 Mbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：4H11G；Package：LFPAK4；Power Transistor 80 V, 8 A Dual General Purpose NPN

Designed for general purpose power and switching applications such as regulators, converters and power amplifiers. Housed in advanced LFPAK package (5 x 6 mm) with excellent thermal conduction. Automotive end applications include air bag deployment, power train control units, and instrument cl

文件：1.66812 Mbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：4H199SEP；Package：SOT-23-THIN；OPA4H199-SEP 40-V, Radiation Hardened, Rail-to-Rail Input/Output, Low Offset Voltage, Low Noise Op Amp in Space Enhanced Plastic

1 Features • Radiation hardened – Single Event Latch-up (SEL) immune to 43 MeV-cm2/mg at 125°C – ELDRS free to 30 krad(Si) – Total Ionizing Dose (TID) RLAT for every wafer lot up to 30 krad(Si) • Supports defense, aerospace, and medical applications – Single controlled baseline – One fab

文件：2.46996 Mbytes 页数：38 Pages

TI

德州仪器

丝印：4H2S40V；Package：SOT1205；Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration)

1. General description Dual, standard level N-channel MOSFET in an LFPAK56D package (halfbridge configuration), using NextpowerS3 technology. An internal connection is made between the source (S1) of the high-side FET to the drain (D2) of the low-side FET, making the device ideal to use as a

文件：302.7 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：4H3L40；Package：SOT1210；N-channel 40 V, 4.3 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology

1. General description 95 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies. 2. Features and benefits • Avala

文件：304.65 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：4H3S40；Package：SOT1210；N-channel 40 V, 4.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

1. General description 95 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies. 2. Features and benefits • Av

文件：303.75 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：4HG；Package：DO221-AC；400 W TVS in SMA Flat

Features • Peak pulse power: 400 W (10/1000 μs) and 2.5 kW (8/20 μs) • Flat and thin package: 1 mm • Stand-off voltage range from 5 V to 188 V • Unidirectional type • Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C • Operating Tj max: 175 °C • High power capability at Tj max.: up to

文件：655.85 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：4HY；Package：DO221-AC；400 W TVS in SMA Flat

Features • Peak pulse power: 400 W (10/1000 μs) and 2.5 kW (8/20 μs) • Flat and thin package: 1 mm • Stand-off voltage range from 5 V to 188 V • Unidirectional type • Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C • Operating Tj max: 175 °C • High power capability at Tj max.: up to

文件：655.85 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体