丝印：4H2S40V；Package：SOT1205；Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration)

1. General description Dual, standard level N-channel MOSFET in an LFPAK56D package (halfbridge configuration), using NextpowerS3 technology. An internal connection is made between the source (S1) of the high-side FET to the drain (D2) of the low-side FET, making the device ideal to use as a

文件：302.7 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration)

Dual, standard level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using NextpowerS3 technology.\n An internal connection is made between the source (S1) of the high-side FET to the drain (D2) of the low-side FET, making the device ideal to use as a half-bridge switch in hi • LFPAK56D package with half-bridge configuration enables:• Reduced PCB layout complexity\n• Module shrinkage through reduced component count\n• Improved system level Rth(j-amb) due to optimized package design\n• Lower parasitic inductance to support higher efficiency\n• Footprint compatibility with;

Nexperia

安世

Nexperia
TO-263

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

上传：深圳市铭尔达科技有限公司

PROTEK
SOT143

Protek

上传：深圳市鼎欣微电子有限公司

ROHM
3921

ROHM

罗姆

上传：深圳市金嘉锐电子有限公司