丝印：4AK；Package：DO221-AC；400 W TVS in SMA Flat

Features • Peak pulse power: 400 W (10/1000 μs) and 2.5 kW (8/20 μs) • Flat and thin package: 1 mm • Stand-off voltage range from 5 V to 188 V • Unidirectional type • Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C • Operating Tj max: 175 °C • High power capability at Tj max.: up to

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STMICROELECTRONICS

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Silicon N-Channel Power MOS FET Array

Silicon N-Channel Power MOS FET Array Features • Low on-resistance RDS(on) ≤0.06 , VGS = 10 V, ID= 5 A RDS(on) ≤0.075 , VGS = 4 V, ID= 5 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) ≤ 0.15Ω, VGS = 10V, ID = 3.0A • 4V gate drive devices. • High density mounting

文件：53.04 Kbytes 页数：9 Pages

HitachiHitachi Semiconductor

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Silicon N-Channel Power MOS FET Array

文件：49.7 Kbytes 页数：9 Pages

HitachiHitachi Semiconductor

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Silicon N-Channel Power MOS FET Array

文件：50.19 Kbytes 页数：9 Pages

HitachiHitachi Semiconductor

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Silicon N-Channel Power MOS FET Array

文件：50.15 Kbytes 页数：9 Pages

HitachiHitachi Semiconductor

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Silicon N-Channel Power MOS FET Array

文件：49.87 Kbytes 页数：9 Pages

HitachiHitachi Semiconductor

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Silicon N Channel MOS FET High Speed Power Switching

文件：53.09 Kbytes 页数：8 Pages

HitachiHitachi Semiconductor

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Silicon N-Channel Power MOS FET Array

文件：36.8 Kbytes 页数：6 Pages

HitachiHitachi Semiconductor

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Silicon N-Channel Power MOS FET Array

文件：36.92 Kbytes 页数：6 Pages

HitachiHitachi Semiconductor

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