Shielded Surface Mount Power Inductors

文件：140.49 Kbytes 页数：3 Pages

MURATA

村田

丝印：486XY；Package：LGA2510P10E；Transient Voltage Suppressing Device For ESD/Transient Protection

Features  ESD Protection for 4 lines with bi-direction  Provide transient protection for the protected line to IEC 61000-4-2 (ESD) ±30kV (air), ±30kV (contact) IEC 61000-4-4 (EFT) 50A (5/50ns) IEC 61000-4-5 (Lightning) 4A (8/20s)  For operating voltage of 60V and below  Fast turn-on a

文件：108.31 Kbytes 页数：7 Pages

AMAZING

晶焱科技

丝印：4860N；Package：TO-252；25V N -Channel MOSFET

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses Applications • VCORE Applications • DC−DC Converters • High/Low Side Switching VDS(V) =25V ID =65A (VGS = 10V) RDS(ON)

文件：482.46 Kbytes 页数：7 Pages

UMW

友台半导体

丝印：4860N；Package：TO-252；25V N -Channel MOSFET

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses Applications • VCORE Applications • DC−DC Converters • High/Low Side Switching VDS(V) =25V ID =65A (VGS = 10V) RDS(ON)

文件：482.46 Kbytes 页数：7 Pages

UMW

友台半导体

丝印：4861；Package：SOIC；1-W MONO AUDIO POWER AMPLIFIER

FEATURES · 1-W BTL Output (5 V, 0.11 % THD+N) · 3.3-V and 5-V Operation · No Output Coupling Capacitors Required · Shutdown Control (IDD = 0.6 μA) · Uncompensated Gains of 2 to 20 (BTL Mode) · Surface-Mount Packaging · Thermal and Short-Circuit Protection · High Supply Ripple Rejection

文件：661.09 Kbytes 页数：28 Pages

TI

德州仪器

丝印：4861；Package：SOIC；1-W MONO AUDIO POWER AMPLIFIER

FEATURES · 1-W BTL Output (5 V, 0.11 % THD+N) · 3.3-V and 5-V Operation · No Output Coupling Capacitors Required · Shutdown Control (IDD = 0.6 μA) · Uncompensated Gains of 2 to 20 (BTL Mode) · Surface-Mount Packaging · Thermal and Short-Circuit Protection · High Supply Ripple Rejection

文件：661.09 Kbytes 页数：28 Pages

TI

德州仪器

丝印：4861；Package：SOIC；1-W MONO AUDIO POWER AMPLIFIER

FEATURES · 1-W BTL Output (5 V, 0.11 % THD+N) · 3.3-V and 5-V Operation · No Output Coupling Capacitors Required · Shutdown Control (IDD = 0.6 μA) · Uncompensated Gains of 2 to 20 (BTL Mode) · Surface-Mount Packaging · Thermal and Short-Circuit Protection · High Supply Ripple Rejection

文件：661.09 Kbytes 页数：28 Pages

TI

德州仪器

丝印：4861；Package：SOIC；1-W MONO AUDIO POWER AMPLIFIER

FEATURES · 1-W BTL Output (5 V, 0.11 % THD+N) · 3.3-V and 5-V Operation · No Output Coupling Capacitors Required · Shutdown Control (IDD = 0.6 μA) · Uncompensated Gains of 2 to 20 (BTL Mode) · Surface-Mount Packaging · Thermal and Short-Circuit Protection · High Supply Ripple Rejection

文件：661.09 Kbytes 页数：28 Pages

TI

德州仪器

丝印：4861；Package：SOIC；1-W MONO AUDIO POWER AMPLIFIER

FEATURES · 1-W BTL Output (5 V, 0.11 % THD+N) · 3.3-V and 5-V Operation · No Output Coupling Capacitors Required · Shutdown Control (IDD = 0.6 μA) · Uncompensated Gains of 2 to 20 (BTL Mode) · Surface-Mount Packaging · Thermal and Short-Circuit Protection · High Supply Ripple Rejection

文件：661.09 Kbytes 页数：28 Pages

TI

德州仪器

丝印：4862；Package：SOP-8；Dual N-Channel MOSFET

文件：1.02548 Mbytes 页数：4 Pages

KEXIN

科信电子