丝印：4860N；Package：TO-252；25V N -Channel MOSFET

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses Applications • VCORE Applications • DC−DC Converters • High/Low Side Switching VDS(V) =25V ID =65A (VGS = 10V) RDS(ON)

文件：482.46 Kbytes 页数：7 Pages

UMW

友台半导体

丝印：4860N；Package：TO-252；25V N -Channel MOSFET

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses Applications • VCORE Applications • DC−DC Converters • High/Low Side Switching VDS(V) =25V ID =65A (VGS = 10V) RDS(ON)

文件：482.46 Kbytes 页数：7 Pages

UMW

友台半导体