丝印：483；Package：DSBGA；TPS22932B Low Input Voltage, Ultralow rON Load Switch With Configurable Enable Logic and Controlled Slew-Rate

1 Features • Input Voltage: 1.1 V to 3.6 V • Ultralow ON-Resistance – rON = 55 mΩ at VIN = 3.6 V – rON = 65 mΩ at VIN = 2.5 V – rON = 75 mΩ at VIN = 1.8 V – rON = 115 mΩ at VIN = 1.2 V • 500-mA Maximum Continuous Switch Current • Quiescent Current

文件：663.45 Kbytes 页数：28 Pages

TI

德州仪器

丝印：483；Package：DSBGA；TPS22932B Low Input Voltage, Ultralow rON Load Switch With Configurable Enable Logic and Controlled Slew-Rate

1 Features • Input Voltage: 1.1 V to 3.6 V • Ultralow ON-Resistance – rON = 55 mΩ at VIN = 3.6 V – rON = 65 mΩ at VIN = 2.5 V – rON = 75 mΩ at VIN = 1.8 V – rON = 115 mΩ at VIN = 1.2 V • 500-mA Maximum Continuous Switch Current • Quiescent Current

文件：663.45 Kbytes 页数：28 Pages

TI

德州仪器

丝印：483；Package：DSBGA；TPS22932B Low Input Voltage, Ultralow rON Load Switch With Configurable Enable Logic and Controlled Slew-Rate

1 Features • Input Voltage: 1.1 V to 3.6 V • Ultralow ON-Resistance – rON = 55 mΩ at VIN = 3.6 V – rON = 65 mΩ at VIN = 2.5 V – rON = 75 mΩ at VIN = 1.8 V – rON = 115 mΩ at VIN = 1.2 V • 500-mA Maximum Continuous Switch Current • Quiescent Current

文件：663.45 Kbytes 页数：28 Pages

TI

德州仪器

丝印：483；Package：DSBGA；TPS22932B Low Input Voltage, Ultralow rON Load Switch With Configurable Enable Logic and Controlled Slew-Rate

1 Features • Input Voltage: 1.1 V to 3.6 V • Ultralow ON-Resistance – rON = 55 mΩ at VIN = 3.6 V – rON = 65 mΩ at VIN = 2.5 V – rON = 75 mΩ at VIN = 1.8 V – rON = 115 mΩ at VIN = 1.2 V • 500-mA Maximum Continuous Switch Current • Quiescent Current

文件：663.45 Kbytes 页数：28 Pages

TI

德州仪器

丝印：4832；Package：SOP-8；Dual N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 10A (VGS = 10V) ● RDS(ON)

文件：2.01129 Mbytes 页数：5 Pages

KEXIN

科信电子

丝印：4832；Package：SOP-8；Dual N-Channel Enhancement Mode Power MOSFET

RDs(ON)=16 mQ @VGS=10V RDS(ON) =20 mQ @VGS=4.5V Super high density cell design for extremely low RDs(ON) Exceptional on-resistance and maximum DC current capability

文件：5.66909 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：4832；Package：SOP-8；Dual N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 10A (VGS = 10V) ● RDS(ON)

文件：2.70877 Mbytes 页数：5 Pages

KEXIN

科信电子

丝印：4832；Package：SOP-8；Dual N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 10A (VGS = 10V) ● RDS(ON)

文件：2.01129 Mbytes 页数：5 Pages

KEXIN

科信电子

丝印：4832；Package：SOP-8；Dual N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 10A (VGS = 10V) ● RDS(ON)

文件：2.70877 Mbytes 页数：5 Pages

KEXIN

科信电子

丝印：4835N；Package：SO-8FL；Power MOSFET 30 V, 104 A, Single N?묬hannel, SO??FL

MOSFET – Power, Single, N-Channel, SO-8FL 30 V, 104 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb−Free Devices Applications • Refer to Application Note AND8195/D • CPU P

文件：142.35 Kbytes 页数：7 Pages

ONSEMI

安森美半导体