High Voltage Low Impedance Long Life, 5000 hours

文件：246.19 Kbytes 页数：3 Pages

ILLINOISCAPACITOR

丝印：478XY；Package：DFN2510P10E；Ultra-Low Capacitance ESD Protection Array For High-Speed I/O Port

Features
ESD protection for 4 high-speed I/O channels
Provide transient protection for each line to IEC 61000-4-2 (ESD) ±15kV (air), ±13kV (contact) IEC 61000-4-4 (EFT) 30A (5/50ns) IEC 61000-4-5 (Lightning) 5A (8/20ms)
For low operating voltage of 3.3V and below
Ultra-low capacitan

文件：252.18 Kbytes 页数：7 Pages

AMAZING

晶焱科技

丝印：478LWF；Package：DFN8；Power MOSFET 40 V, 14.5 m, 29 A, Dual N?묬hannel

Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFD5C478NLWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：179.95 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：478NWF；Package：DFN8；Power MOSFET 40 V, 17.0 m, 27 A, Dual N?묬hannel

Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFD5C478NWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：220.92 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：478L；Package：WDFN8；MOSFET ??Power, Single N-Channel 40 V, 14 m, 26 A

文件：207.28 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：478L；Package：WDFN8；MOSFET ??Power, Single N-Channel 40 V, 14 m, 26 A

文件：208.05 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

4781 Connector Rewireable 10A C15

SCHURTER

硕特

4781 Connector Rewireable 10A C15

SCHURTER

硕特

AC电源连接器

SCHURTER

硕特

包装：散装 类别：标签，标志，护栏，标识 标签 描述：B851 5.75X3 BK/RD/WH 2-SIDE REV

Brady Corporation