丝印：478L；Package：WDFN8；MOSFET ??Power, Single N-Channel 40 V, 14 m, 26 A

文件：207.28 Kbytes 页数：7 Pages

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安森美半导体

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 阵列 描述：AFSM T6 40V LL U8FL

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安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 8.4 m, 42 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：232.49 Kbytes 页数：7 Pages

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安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 42A@ TC=25℃ ·Drain Source Voltage -VDSS= 40 V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.4mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：260.04 Kbytes 页数：2 Pages

ISC

无锡固电

MOSFET ??Power, Single, N-Channel 40 V, 7.7 m, 45 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：233.87 Kbytes 页数：7 Pages

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安森美半导体