MOSFET ??Power, Single, N-Channel 40 V, 7.7 m, 45 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：233.87 Kbytes 页数：7 Pages

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安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 7.7mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：260.24 Kbytes 页数：2 Pages

ISC

无锡固电

MOSFET ??Power, Single, N-Channel 40 V, 7.7 m, 45 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：233.87 Kbytes 页数：7 Pages

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安森美半导体

单 N 沟道，功率 MOSFET，40V，45A，7.7mΩ

Automotive Power MOSFET in a DPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Low on-resistance\n• High current capability\n• 100% avalanche energy tested\n• AEC−Q101 Qualified and PPAP Capable\n• RoHS Compliant\n;

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安森美半导体