N and P-Channel Enhancement Mode Power MOSFET

Description The 4616 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 30V,ID =8.0A RDS(ON)

文件：4.35527 Mbytes 页数：10 Pages

TUOFENG

拓锋半导体

Quick exhaust valve

文件：80.25 Kbytes 页数：1 Pages

FESTOFesto Corporation.

费斯托费斯托（中国）有限公司

Heyco®-Tite EMC Brass Liquid Tight Cordgrips

文件：340.26 Kbytes 页数：1 Pages

HEYCO

VHB Tape - Specialty Tapes

文件：735.51 Kbytes 页数：9 Pages

3M

丝印：4616；Package：SOP-8；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 30V ID = 8 A (VGS = 10V) RDS(ON)

文件：1.84608 Mbytes 页数：7 Pages

KEXIN

科信电子

丝印：4616；Package：SOP-8；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 30V ID = 8 A (VGS = 10V) RDS(ON)

文件：3.13403 Mbytes 页数：7 Pages

KEXIN

科信电子

丝印：4616；Package：SOP-8；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 30V ID = 8 A (VGS = 10V) RDS(ON)

文件：1.84608 Mbytes 页数：7 Pages

KEXIN

科信电子

丝印：4616；Package：SOP-8；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 30V ID = 8 A (VGS = 10V) RDS(ON)

文件：3.13403 Mbytes 页数：7 Pages

KEXIN

科信电子

丝印：4616；Package：SOP-8L；N- and P-Channel Complementary, 20V,MOSFET

文件：2.37059 Mbytes 页数：9 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韦尔股份上海韦尔半导体股份有限公司

丝印：4616；Package：SOP-8L；N- and P-Channel Complementary, 20V,MOSFET

文件：2.37059 Mbytes 页数：9 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韦尔股份上海韦尔半导体股份有限公司