| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=44A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested DESCRIPTION motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
44A,500V,0.12Ohm,N-ChannelSMPSPowerMOSFET Features •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness •ReducedrDS(ON) •ReducedMillerCapacitanceandLowInputCapacitance •ImprovedSwitchingSpeedwithLowEMI •175°CRatedJunctionTemperature | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
HiPerFETPowerMOSFETsQ-Class HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features •ConformstoSOT-227Boutline •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance •Fastintrins | IXYS IXYS Integrated Circuits Division | IXYS | ||
PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode VDSS=500V ID25=44A RDS(on)≤140mΩ trr≤200ns Features Internationalstandardpackages UnclampedInductiveSwitching(UIS)rated Lowpackageinductance -easytodriveandtoprotect | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=44A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features Internationalstandardpackages MoldingepoxiesmeetUL94V-0flammabilityclassification SOT-227BminiBLOCwithaluminiumnitrideisolation LowRDS(on)HDMOS™process UnclampedInductiveSwitching(UIS | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETs | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerRFPowerMOSFETsF-ClassMegaHertzSwitchingSingleMOSFETDie SingleMOSFETDie N-ChannelEnhancementModeAvalancheRated,LowQg,LowIntrinsicRgHighdV/dt,Lowtrr Features RFCapableMOSFETs DoubleMetalProcessforLowGateResistance AvalancheRated LowPackageInductance FastIntrinsicRectifier | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=44A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=44A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.14Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode VDSS=500V ID25=44A RDS(on)≤140mΩ trr≤200ns Features Internationalstandardpackages UnclampedInductiveSwitching(UIS)rated Lowpackageinductance -easytodriveandtoprotect | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETsQ-CLASS | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=44A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFETs | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features Internationalstandardpackages MoldingepoxiesmeetUL94V-0flammabilityclassification SOT-227BminiBLOCwithaluminiumnitrideisolation LowRDS(on)HDMOS™process UnclampedInductiveSwitching(UIS | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features •IXYSadvancedlowQgprocess •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •UnclampedInductiveSwitching(UIS)rated •LowRDS(on) •Fastintrinsicdiode •Internationalst | IXYS IXYS Integrated Circuits Division | IXYS | ||
PolarHVHiPerFETPowerMOSFETISOPLUS247 VDSS=500V ID25=24A RDS(on)≤150mΩ trr≤200ns N-ChannelEnhancement AvalancheRated FastIntrinsicDiode Features Internationalstandardisolatedpackage ULrecognizedpackage SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -I | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETsISOPLUS247Q-Class HiPerFET™PowerMOSFETsISOPLUS247™,Q-Class(ElectricallyIsolatedBackside) N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation | IXYS IXYS Integrated Circuits Division | IXYS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOT |
2023+ |
TO-3P |
8700 |
原装现货 |
询价 | ||
IXYS |
17+ |
MODULE |
1020 |
公司大量全新现货 随时可以发货 |
询价 | ||
ST |
23+ |
TO-247 |
3000 |
全新原装 |
询价 | ||
IR墨西哥 |
2021+ |
to-220 |
150000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
UNK |
2021+ |
PLCCSKT |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
JST |
2016+ |
CONNECTOR |
49800 |
只做原装,假一罚十,公司专营进口连接器! |
询价 | ||
JST |
23+ |
connector |
28738 |
原装正品现货 |
询价 | ||
23+ |
N/A |
46180 |
正品授权货源可靠 |
询价 | |||
JST |
50000 |
连接器专营加微13425146986 |
询价 | ||||
JST |
2020+ |
50000 |
主营进口连接器,原装现货超低价! |
询价 |
