600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGT1N40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only

文件：152.32 Kbytes 页数：10 Pages

Fairchild

仙童半导体

IGBT

文件：247.74 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

40A, 600V FIELD STOP IGBT

DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for induction Heating, UPS, SMPS and PFC application. FEATURES 40A, 600V, VCE(sat)(typ.)=1.8V@IC=40A Low conduction loss Fast switching High input impedance

文件：437.8 Kbytes 页数：6 Pages

SILAN

士兰微

Super Junction FREDFET

文件：191.93 Kbytes 页数：5 Pages

ADPOW