600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGT1N40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only

文件：152.32 Kbytes 页数：10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

600V, SMPS Series N-Channel IGBT

The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderat

文件：93.53 Kbytes 页数：8 Pages

Intersil

600V, SMPS Series N-Channel IGBT

The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderat

文件：181.06 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

NCE(新洁能）
TO-252-2L

NCE(新洁能）

上传：上海闻业电子科技有限公司

FM/富满
SOP-8

FM/富满

上传：深圳广友电子有限公司