Inductive Sensor

Features ■Threaded barrel, M18 x 1 ■Plastic, PA12‐GF30-V0 ■DC 2-wire, nom. 8.2 VDC ■Output acc. to DIN EN 60947-5-6 (NAMUR) ■Terminal chamber ■ATEX category II 2 G, Ex Zone 1 ■ATEX category II 1 D, Ex Zone 20 ■SIL 2 (Low Demand Mode) acc. to IEC 61508, PL c acc. to ISO 13849-1 at HFT0 ■S

文件：397.51 Kbytes 页数：4 Pages

TURCKTurck, Inc.

图尔克德国图尔克集团公司

Inductive Sensor

Features ■Threaded barrel, M18 x 1 ■Plastic, PA12‐GF30 ■DC 2-wire, nom. 8.2 VDC ■Output acc. to DIN EN 60947-5-6 (NAMUR) ■M12 x 1 male connector Functional principle Inductive sensors detect metal objects contactless and wear-free. For this, they use a high-frequency electromagnetic AC fi

文件：372.44 Kbytes 页数：3 Pages

TURCKTurck, Inc.

图尔克德国图尔克集团公司

Inductive Sensor

Features ■Threaded barrel, M18 x 1 ■Plastic, PA12‐GF30-V0 ■DC 2-wire, nom. 8.2 VDC ■Output acc. to DIN EN 60947-5-6 (NAMUR) ■Terminal chamber ■ATEX category II 2 G, Ex Zone 1 ■ATEX category II 1 D, Ex Zone 20 ■SIL 2 (Low Demand Mode) acc. to IEC 61508, PL c acc. to ISO 13849-1 at HFT0 ■S

文件：399.78 Kbytes 页数：4 Pages

TURCKTurck, Inc.

图尔克德国图尔克集团公司

CONNECTORIZED PHASE SHIFTERS

DESCRIPTION Digital phase shifters optimized for low loss and/or high power. Each one features a unique capability which allows it to be used in either the transmit or receive path. Hermetic, military/industrial design. ADDITIONAL FEATURES (#4031) ■ Low loss: 1.7 dB ■ RF power: 50 dBm CONNECT

文件：71.79 Kbytes 页数：3 Pages

MICRONETICS

微盟电子

ELECTRICAL CHARACTERISTICS

文件：276.79 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

High-Voltage Silicon N-P-N Transistors

High-Voltage Silicon N-P-N Transistors

文件：102.9 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

High-Voltage Silicon N-P-N Transistors

High-Voltage Silicon N-P-N Transistors

文件：102.9 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

High-Voltage Silicon N-P-N Transistors

High-Voltage Silicon N-P-N Transistors

文件：102.9 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

High-Voltage Silicon N-P-N Transistors

High-Voltage Silicon N-P-N Transistors

文件：102.9 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SCHOTTKY RECTIFIER

175℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel plated; Terminals

文件：343.28 Kbytes 页数：5 Pages

SMCDIODE

桑德斯微电子