Silicon N-Channel Dual Gate MOS FET

Features · Low noise figure. NF = 1.0 dB typ. at f = 200 MHz · Capable of low voltage operation · Provide mini mold packages; MPAK-4R(SOT-143 var.) Application UHF / VHF RF amplifier

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HITACHIHitachi Semiconductor

日立日立公司

Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier

Features • Low noise characteristics; NF = 1.0 dB typ. (at f = 900 MHz) • High gain characteristics; PG = 24 dB typ. (at f = 900 MHz) • Capable low voltage operation; +B = 3.5 V • High Endurance Voltage; VDS = 6 V

文件：179.16 Kbytes 页数：8 Pages

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瑞萨

Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier

Features • Low noise characteristics; NF = 1.0 dB typ. (at f = 900 MHz) • High gain characteristics; PG = 24 dB typ. (at f = 900 MHz) • Capable low voltage operation; +B = 3.5 V • High Endurance Voltage; VDS = 6 V

文件：85.6 Kbytes 页数：8 Pages

RENESAS

瑞萨

Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier

Features • Low noise characteristics; NF = 1.0 dB typ. (at f = 900 MHz) • High gain characteristics; PG = 24 dB typ. (at f = 900 MHz) • Capable low voltage operation; +B = 3.5 V • High Endurance Voltage; VDS = 6 V

文件：179.16 Kbytes 页数：8 Pages

RENESAS

瑞萨

Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier

Features • Low noise characteristics; NF = 1.0 dB typ. (at f = 900 MHz) • High gain characteristics; PG = 24 dB typ. (at f = 900 MHz) • Capable low voltage operation; +B = 3.5 V • High Endurance Voltage; VDS = 6 V

文件：85.6 Kbytes 页数：8 Pages

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N CHANNEL DUAL GATE MES TYPE (UHF BAND LOW NOISE AMP, MIX)

文件：525.04 Kbytes 页数：9 Pages

TOSHIBA

东芝

Silicon N-Channel Dual Gate MOS FET

文件：59.19 Kbytes 页数：10 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N-Channel Dual Gate MOS FET

· Low noise figure.\n   NF = 1.0 dB typ. at f = 200 MHz\n· Capable of low voltage operation\n· Provide mini mold packages; MPAK-4R(SOT-143 var.)Application\nUHF / VHF RF amplifier\n ;

HITACHI

日立

Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier

• Low noise characteristics; NF = 1.0 dB typ. (at f = 900 MHz)\n• High gain characteristics; PG = 24 dB typ. (at f = 900 MHz)\n• Capable low voltage operation; +B = 3.5 V\n• High Endurance Voltage; VDS = 6 V;

Renesas

瑞萨

Silicon N-Channel Dual Gate MOS FET

HITACHI

日立