TTC019

Marking：3J；Package：PW-Mini；Bipolar Transistors Silicon NPN Epitaxial Type

Applications •High-SpeedSwitching •DC-DCConverters Features (1)HighDCcurrentgain:hFE=400to1000(VCE=2V,IC=0.5A) (2)Lowcollector-emittersaturationvoltage:VCE(sat)=0.21V(max)(IC=1.6A,IB=32mA) (3)High-speedswitching:tf=120ns(typ.)(IC=1.6A)

BC858A

Marking：3J；Package：SOT-23；PNP Plastic-Encapsulate Transistors

BC858A

Marking：3J；Package：SOT-23；Ideally suited for automatic insertion

BC858AW

Marking：3J；Package：SOT-323；PNP Silicon Epitaxial Planar Transistor

BC858AWG

Marking：3J；Package：SOT-323；PNP Silicon Epitaxial Planar Transistor

LBC858ALT1G

Marking：3J；Package：SOT-23；General Purpose Transistors PNP Silicon

PMPB20XNEA

Marking：3J；Package：DFN2020MD-6；20 V, N-channel Trench MOSFET

RB706F-40

Marking：3J；Package：SOT-323；Shottky barrier diode

RB706F-40

Marking：3J；Package：SOT-323；Schottky Barrier Diode

RB706W-40

Marking：3J；Package：SOT-416；Schottky Barrier Diode