Collector-Emitter Breakdown Voltage-: V(BR)CEO= 100V(Min.)

文件：190.89 Kbytes 页数：2 Pages

ISC

无锡固电

isc Silicon NPN Power Transistor

DESCRIPTION ·DC Current Gain : hFE= 15-120@IC= 1A ·Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for B&W TV horizontal output , regulated power supply and powe

文件：300.5 Kbytes 页数：2 Pages

ISC

无锡固电

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY

FEATURES ● 3DD1555 is high breakdown voltage of NPN bipolar transistor. The main process of manufacture: high voltage mesa type process, triple diffused process etc., adoption of fully plastic packge. RoHS product. APPLICATIONS ● Horizontal deflection output for colo

文件：150.5 Kbytes 页数：6 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY

FEATURES ● 3DD1555 is high breakdown voltage of NPN bipolar transistor. The main process of manufacture: high voltage mesa type process, triple diffused process etc., adoption of fully plastic packge. RoHS product. APPLICATIONS ● Horizontal deflection output for colo

文件：150.5 Kbytes 页数：6 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1556 FOR LOW FREQUENCY

BVCBO 1500 V IC 6 A VCE(sat) 5 V(max) tf 1 μs(max) FEATURES ● 3DD1556 is high breakdown voltage of NPN bipolar transistor. The main process of manufacture: high voltage mesa type process, triple diffused process etc., adoption of fully plastic packge. RoHS product. APPLICATIONS ● Horizontal

文件：150.78 Kbytes 页数：6 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1556 FOR LOW FREQUENCY

BVCBO 1500 V IC 6 A VCE(sat) 5 V(max) tf 1 μs(max) FEATURES ● 3DD1556 is high breakdown voltage of NPN bipolar transistor. The main process of manufacture: high voltage mesa type process, triple diffused process etc., adoption of fully plastic packge. RoHS product. APPLICATIONS ● Horizontal

文件：150.78 Kbytes 页数：6 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

Silicon NPN Power Transistor

DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor

文件：243 Kbytes 页数：2 Pages

ISC

无锡固电

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) ·DC Current Gain- : hFE= 30~250(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 2.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·D

文件：281.5 Kbytes 页数：2 Pages

ISC

无锡固电

isc Silicon NPN Power Transistor

文件：267.87 Kbytes 页数：2 Pages

ISC

无锡固电

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555A FOR LOW FREQUENCY

文件：150.58 Kbytes 页数：6 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司