isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) ·DC Current Gain- : hFE= 30~250(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 2.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·D

文件：281.5 Kbytes 页数：2 Pages

ISC

无锡固电

Collector-Emitter Breakdown Voltage-: V(BR)CEO= 100V(Min.)

文件：190.89 Kbytes 页数：2 Pages

ISC

无锡固电

Collector-Emitter Breakdown Voltage-: V(BR)CEO= 60V(Min.)

文件：191.19 Kbytes 页数：2 Pages

ISC

无锡固电

Collector-Emitter Breakdown Voltage-: V(BR)CEO= 100V(Min.)

文件：190.49 Kbytes 页数：2 Pages

ISC

无锡固电