MMBTA44

Marking：3D；Package：SOT-23；NPN EPITAXIAL SILICON TRANSISTOR

FEATURES *Collector-Emittervoltage:VCEO=400V(UTCMMBTA44) VCEO=350V(UTCMMBTA45) *Collectorcurrentupto300mA *ComplementtoUTCMMBTA94/93 *PowerDissipation:PD(max)=350mW

MMBTA44

Marking：3D；Package：SOT-23；Plastic-Encaps ulate Transistors

FEATURES HighCollector-EmitterVoltage ComplementtoMMBTA94

MMBTA44-L

Marking：3D；Package：SOT-23；NPN Transistors

■Features ●HighCollector-EmitterVoltage ●ComplementtoMMBTA94

MMBTA45

Marking：3D；Package：SOT-23；NPN EPITAXIAL SILICON TRANSISTOR

FEATURES *Collector-Emittervoltage:VCEO=400V(UTCMMBTA44) VCEO=350V(UTCMMBTA45) *Collectorcurrentupto300mA *ComplementtoUTCMMBTA94/93 *PowerDissipation:PD(max)=350mW

PBSS4230T

Marking：3D；Package：SOT23；30 V, 2 A NPN low VCEsat (BISS) transistor

FEATURES •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highefficiencyleadingtolessheatgeneration •Reducedprinted-circuitboardrequirements •CosteffectivealternativetoMOSFETsinspecificapplications. APPLICATIONS •Powermanagem

RB715F

Marking：3D；Package：SOT-323；Extra small power mold type

FEATURES Extrasmallpowermoldtype. LowVF. Highreliability. APPLICATIONS Generalpurposeapplication.

RB715F

Marking：3D；Package：SOT-323；Schottky barrier diode

Features Highreliability Smallmoldtype Lowcapacitance Application Highspeedswitching

RB715WFH

Marking：3D；Package：SOT-416；Shottky barrier diode

Features Highreliability Smallmoldtype Lowcapacitance Application Highspeedswitching Structure Epitaxialplanar

RB715WM

Marking：3D；Package：SOT-416FL；Schottky Barrier Diode

Features 1)Ultrasmallmoldtype(EMD3F) 2)Highreliability 3)SuperlowVF Application Highspeedswitching Construction Siliconepitaxialplanartype

RB715Z

Marking：3D；Package：VMD3；Schottky barrier diode

●Features Highreliability Smallmoldtype Lowcapacitance ●Application Highspeedswitching