3DG3332-TA

Marking：3DG3332；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Highbreakdownvoltage ExcellenthFElinearity LargecurrentcapacityandwideASO

BC856

Marking：3D-；Package：SOT-23；PNP general purpose transistors

DESCRIPTION PNPtransistorinaSOT23plasticpackage. NPNcomplements:BC846andBC847. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitchingandamplification.

BC856W

Marking：3D-；Package：SOT-323；PNP general purpose transistors

DESCRIPTION PNPtransistorinaplasticSOT323package. NPNcomplements:BC846WandBC847W. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.80) •S-minipackage. APPLICATIONS •Generalpurposeswitchingandamplification.

NTMFS3D5N08XT1G

Marking：3D5N08；Package：DFN5；MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 3 m, 135 A

Features •LowQRR,SoftRecoveryBodyDiode •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications •SynchronousRectification(SR)inDC−DCandAC−DC •P

NVMFS3D0P04M8LT1G

Marking：3D0P04；Package：DFN5；MOSFET - Power, Single P-Channel -40 V, 2.7 m, -183 A

Features •LowRDS(on)toMinimizeConductionLosses •HighCurrentCapability •AvalancheEnergySpecified •NVMFWS3D0P04M8L−WettableFlanksProduct •NVMPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 QualifiedandPPAPCapab

NVMFWS3D0N08XT1G

Marking：3D0N8W；Package：DFNW5；MOSFET - Power, Single N-Channel STD Gate, SO8FL 80 V, 3 m, 135 A

Features LowQRR,SoftRecoveryBodyDiode LowRDS(on)toMinimizeConductionLosses LowQGandCapacitancetoMinimizeDriverLosses AEC−Q101QualifiedandPPAPCapable TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant Applications SynchronousRectificati

NVMFWS3D0P04M8LT1G

Marking：3D0P4W；Package：DFN5；MOSFET - Power, Single P-Channel -40 V, 2.7 m, -183 A

Features •LowRDS(on)toMinimizeConductionLosses •HighCurrentCapability •AvalancheEnergySpecified •NVMFWS3D0P04M8L−WettableFlanksProduct •NVMPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 QualifiedandPPAPCapab

NVMFWS3D5N08XT1G

Marking：3D5N8W；Package：DFNW5；MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 3.5 m, 119 A

Features •LowQRR,SoftRecoveryBodyDiode •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant Applications •SynchronousRectificati

NVMJS3D0N06CTWG

Marking：3D0N06C；Package：LFPAK8；MOSFET - Power, Single N-Channel 60 V, 2.9 m, 139.3 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVMJST3D3N04CTXG

Marking：3D34C；Package：TCPAK57；MOSFET – Power, Single N-Channel 40 V, 3.3 m, 157 A

Features SmallFootprint(5x7mm)forCompactDesign LowRDS(on)toMinimizeConductionLosses LowQGandCapacitancetoMinimizeDriverLosses TCPAK575x7TopCoolPackage AEC−Q101QualifiedandPPAPCapable TheseDevicesarePb−FreeandareRoHSCompliant