HIGH VOLTAGE TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR

FEATURES * Collector-Emitter voltage: VCEO=400V (UTC MMBTA44) VCEO=350V (UTC MMBTA45) * Collector current up to 300mA * Complement to UTC MMBTA94/93 * Power Dissipation: PD(max)=350mW

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UTC

友顺

EPITAXIAL PLANAR NPN TRANSISTOR

HIGH VOLTAGE APPLICATION. FEATURES • High Breakdown Voltage. • Collector Power Dissipation : PC=350mW.

文件：319.25 Kbytes 页数：2 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Surface mount High Voltage Transistors

Surface mount High Voltage Transistors • Power dissipation 200 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

文件：112.63 Kbytes 页数：2 Pages

DIOTEC

德欧泰克

丝印：3D；Package：SOT-23；NPN Silicon High Voltage Transistor 350mW

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Surface Mount SOT-23 Package • 150 °C Junction Temperature • Halogen free available upon request by adding

文件：221.59 Kbytes 页数：2 Pages

MCC

NPN Silicon Epitaxial planar Transistor

NPN Silicon Epitaxial planar Transistor for high voltage switching and amplifier applications.

文件：183.47 Kbytes 页数：2 Pages

SURGE

丝印：3D；Package：SOT-23；High-Voltage NPN Transistor Surface Mount

High-Voltage NPN Transistor Surface Mount P/b Lead(Pb)-Free

文件：195.89 Kbytes 页数：3 Pages

WEITRON

SOT-23-3L Plastic-Encapsulate Transistors

TRANSISTOR（ NPN ） FEATURES Power dissipation PCM : 0.35 W （ Tamb=25℃） Collector current ICM : 0.2 A Collector-base voltage V(BR)CBO : 400 V Operating and storage junction temperature range TJ， Tstg: -55℃ to +150℃

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AVICTEK

丝印：3D；Package：SOT-23；SOT-23-3L Plastic-Encapsulate Transistors

[Dongguan Pingjingsemi Technology Co., Ltd,] Features ● For High Voltage Switching and Amplifier Applications.

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ETCList of Unclassifed Manufacturers

未分类制造商

NPN High Voltage Transistor

■ FEATURES NPN High Voltage Transistor

文件：349.12 Kbytes 页数：2 Pages

GSME

桂微

TRANSISTOR(NP)

FEATURES ● High Collector-Emitter Voltage ● Complement to MMBTA94

文件：700.62 Kbytes 页数：1 Pages

HTSEMI

金誉半导体