丝印：358；Package：SOT-23；P−CHANNEL MOSFET

Features • Low gate charge (4 nC typical) • High performance trench technology for extremely low R DS(ON) . • High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30 higher power handling capability. • VDS (V) = -30V • ID = -1.5 A • RDS(ON) 90m (VGS = -

文件：324.26 Kbytes 页数：5 Pages

EVVOSEMI

翊欧

丝印：358；Package：SO-8；Low Power Dual Operational Amplifiers

■ Internally frequency compensated ■ Large DC voltage gain: 100dB ■ Wide bandwidth (unity gain): 1.1mHz (temperature compensated) ■ Very low supply current/op (500μA) essentially independent of supply voltage ■ Low input bias current: 20nA (temperature compensated) ■ Low input offset volta

文件：276.79 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：358；Package：Micro8；Single Supply Dual Operational Amplifiers

Utilizing the circuit designs perfected for Quad Operational Amplifiers, these dual operational amplifiers feature low power drain, a common mode input voltage range extending to ground/VEE, and single supply or split supply operation. The LM358 series is equivalent to one−half of an LM324. These

文件：220.31 Kbytes 页数：14 Pages

ONSEMI

安森美半导体

丝印：358；Package：SO8；Low-power dual operational amplifiers

Features Frequency compensation implemented internally Large DC voltage gain: 100 dB Wide bandwidth (unity gain): 1.1 MHz (temperature compensated) Very low supply current per channel essentially independent of supply voltage Low input bias current: 20 nA (temperature compensated) Low input

文件：1.07811 Mbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体

丝印：358；Package：SO-8；Low Power Dual Operational Amplifiers

■ Internally frequency compensated ■ Large DC voltage gain: 100dB ■ Wide bandwidth (unity gain): 1.1mHz (temperature compensated) ■ Very low supply current/op (500μA) essentially independent of supply voltage ■ Low input bias current: 20nA (temperature compensated) ■ Low input offset volta

文件：276.79 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：358；Package：TSSOP-8；Low Power Dual Operational Amplifiers

■ Internally frequency compensated ■ Large DC voltage gain: 100dB ■ Wide bandwidth (unity gain): 1.1mHz (temperature compensated) ■ Very low supply current/op (500μA) essentially independent of supply voltage ■ Low input bias current: 20nA (temperature compensated) ■ Low input offset volta

文件：276.79 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：358；Package：SO8；Low-power dual operational amplifiers

Features Frequency compensation implemented internally Large DC voltage gain: 100 dB Wide bandwidth (unity gain): 1.1 MHz (temperature compensated) Very low supply current per channel essentially independent of supply voltage Low input bias current: 20 nA (temperature compensated) Low input

文件：1.07811 Mbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体

丝印：358；Package：Micro8；Single Supply Dual Operational Amplifiers

文件：137.67 Kbytes 页数：14 Pages

ONSEMI

安森美半导体

丝印：358；Package：Micro8；Single Supply Dual Operational Amplifiers

文件：142.39 Kbytes 页数：14 Pages

ONSEMI

安森美半导体

丝印：358B；Package：DO-214AA；SURFACE MOUNT SILICON ZENER DIODES

FEATURES • For surface mounted applications in order to optimize board space. • Low profile package • Built-in strain relief • Glass passivated junction • Low inductance • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Pb free product are available : 99 Sn

文件：218.38 Kbytes 页数：3 Pages

FS