B - Indoor keyed

文件：178.84 Kbytes 页数：5 Pages

LEMO

雷莫

B - Indoor keyed

文件：153.5 Kbytes 页数：4 Pages

LEMO

雷莫

B - Indoor keyed

文件：163.43 Kbytes 页数：4 Pages

LEMO

雷莫

丝印：335B；Package：DO-214AA；SURFACE MOUNT SILICON ZENER DIODES

FEATURES • For surface mounted applications in order to optimize board space. • Low profile package • Built-in strain relief • Glass passivated junction • Low inductance • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Pb free product are available : 99 Sn

文件：218.38 Kbytes 页数：3 Pages

FS

丝印：335B；Package：DO-214AA；ZENER DIODE

Features · Glass Passivated Die Construction · 5.0W Power Dissipation · 3.3V – 200V Nominal Zener Voltage · 5 Standard Vz Tolerance · Low Inductance · For Use in Voltage Regulator or Reference · Plastic Case Material has UL Flammability Classification Rating 94V-0

文件：1.47176 Mbytes 页数：7 Pages

DAESAN

丝印：335B；Package：SMB；5.0W SURFACE MOUNT ZENER DIODE

Glass Passivated Die Construction 5.0W Power Dissipation 3.3V – 200V Nominal Zener Voltage 5 Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference Plastic Case Material has UL Flammability Classification Rating 94V-0

文件：106.71 Kbytes 页数：6 Pages

WTE

Won-Top Electronics

丝印：335B；Package：SMC；5.0W SURFACE MOUNT ZENER DIODE

Glass Passivated Die Construction 5.0W Power Dissipation 3.3V – 200V Nominal Zener Voltage 5 Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference Plastic Case Material has UL Flammability Classification Rating 94V-0

文件：106.62 Kbytes 页数：6 Pages

WTE

Won-Top Electronics

丝印：33510；Package：SSOP-9；QUASI-RESONANT FLYBACK GAN CONTROLLER

Features - Up to 150kHz Quasi-Resonant Operation Mode for High Output Voltage - Frequency Foldback for High Average Efficiency - High Reliability Gate Driver for GaN FET - Built-in High-Voltage Startup - Soft Start During Startup Process - Integrated X2 Capacitor Discharge Function - Adapti

文件：1.17275 Mbytes 页数：12 Pages

DIODES

美台半导体

丝印：335A；Package：QFN-10；2.95V-16V 5.5A Ture Reverse Current Blocking eFuse with Input Reverse Polarity Protection

Features • Wide input voltage range: 2.95V o 16V • Integrated back-to-back FETs with 23mΩ on resistance • Fast over-voltage protection - OVCSEL: Overvoltage clamp with pin selectable threshold (3.89V, 5.76V, 13.88V) - OVLO: Adjustable overvoltage lockout • Overcurrent protection with load

文件：185.95 Kbytes 页数：2 Pages

REED

丝印：335B；Package：QFN-10；2.95V-16V 5.5A Ture Reverse Current Blocking eFuse with Input Reverse Polarity Protection

Features • Wide input voltage range: 2.95V o 16V • Integrated back-to-back FETs with 23mΩ on resistance • Fast over-voltage protection - OVCSEL: Overvoltage clamp with pin selectable threshold (3.89V, 5.76V, 13.88V) - OVLO: Adjustable overvoltage lockout • Overcurrent protection with load

文件：185.95 Kbytes 页数：2 Pages

REED