包装：散装 类别：五金件，紧固件，配件 垫圈 - 套管，凸肩 描述：WASHER SHOULDER #6 NYLON

Keystone Electronics

Customer Specification

Construction 1) Component 1 1 X 1 HOOKUP a) Conductor 18 (16/30) AWG Tinned Copper 0.047 b) Insulation 0.016 Wall, Nom. PVC 0.079+/- 0.002 (1) Print ALPHA WIRE E163869-* RU AWM STYLES 1569 105C OR 1007 80C 300V VW-1 IEC 60332-1 18 AWG OR CRU TR-64 90C FT1 CE ROHS {0} * = Factory Code

文件：98.53 Kbytes 页数：4 Pages

ALPHAWIRE

N-Channel Enhancement Mode Field Effect Transistor

FEATURES • 60V, 3.7A, RDS(ON) = 100 mΩ @VGS = 10V. RDS(ON) = 120 mΩ @VGS = 4.5V. • High dense cell design for low RDS(ON) • Rugged and reliable. • SOT-89 Package

文件：495.95 Kbytes 页数：5 Pages

CET

华瑞

60V N -Channel MOSFET

Features • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specification • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge

文件：440.66 Kbytes 页数：7 Pages

UMW

友台半导体

18 (SOLID) AWG Tinned Copper

文件：406.21 Kbytes 页数：4 Pages

ALPHAWIRE

18 (SOLID) AWG Tinned Copper

文件：406.21 Kbytes 页数：4 Pages

ALPHAWIRE

N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：141.04 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

18 (SOLID) AWG Tinned Copper

文件：406.21 Kbytes 页数：4 Pages

ALPHAWIRE

丝印：3055L；Package：SOT-223；N-Channel Enhancement Mode MOSFET

文件：873.32 Kbytes 页数：4 Pages

KEXIN

科信电子

丝印：3055L；Package：SOT-223；Power MOSFET 3.0 A, 60 V, Logic Level, N?묬hannel SOT??23

文件：80.8 Kbytes 页数：6 Pages

ONSEMI

安森美半导体