丝印：302；Package：DSBGA；CSD13302W 12 V N Channel NexFET™ Power MOSFET

1 Features 1• Ultra Low On Resistance • Low Qg and Qgd • Small Footprint 1 mm × 1 mm • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 14.6 mΩ, 12 V, N-Channel device is

文件：548.23 Kbytes 页数：11 Pages

TI

德州仪器

丝印：302；Package：DSBGA；CSD13302W 12 V N Channel NexFET™ Power MOSFET

1 Features 1• Ultra Low On Resistance • Low Qg and Qgd • Small Footprint 1 mm × 1 mm • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 14.6 mΩ, 12 V, N-Channel device is

文件：548.23 Kbytes 页数：11 Pages

TI

德州仪器

丝印：302；Package：DSBGA；CSD13302W 12 V N Channel NexFET™ Power MOSFET

1 Features 1• Ultra Low On Resistance • Low Qg and Qgd • Small Footprint 1 mm × 1 mm • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 14.6 mΩ, 12 V, N-Channel device is

文件：548.23 Kbytes 页数：11 Pages

TI

德州仪器

丝印：302；Package：DSBGA；CSD13302W 12 V N Channel NexFET™ Power MOSFET

1 Features 1• Ultra Low On Resistance • Low Qg and Qgd • Small Footprint 1 mm × 1 mm • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 14.6 mΩ, 12 V, N-Channel device is

文件：548.23 Kbytes 页数：11 Pages

TI

德州仪器

丝印：302；Package：SOT-23；P-Channel 2.5 V (D-S) MOSFET

Features • –20 V, –2.4 A. RDS(ON) = 55m Ω @ VGS = –4.5 V RDS(ON) = 80 mΩ @ VGS = –2.5 V • Fast switching speed • High performance trench technology for extremely low RDS(ON) • SuperSOTTM -3 provides low RDS(ON) and 30 higher power handling capability than SOT23 in the same footprint

文件：309.77 Kbytes 页数：5 Pages

UMW

友台半导体

丝印：302；Package：SOT-23；P-Channel 2.5 V (D-S) MOSFET

General Description This P-Channel 2.5V has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Applications • Power management • Load switch • Battery protection Features • –20 V, –2.4 A. RDS(ON) = 55m Ω @ VGS = –4.5 V RDS(ON) =

文件：295.31 Kbytes 页数：5 Pages

EVVOSEMI

翊欧

丝印：302；RoHS Compliant Halogen Free REACH Compliant

文件：1.3526 Mbytes 页数：10 Pages

LEIDITECH

雷卯电子

丝印：302；RoHS Compliant Halogen Free REACH Compliant

文件：1.3526 Mbytes 页数：10 Pages

LEIDITECH

雷卯电子

丝印：302；Package：WCSP9；28 V, Single input ??Single Output Load Switch IC with Over Voltage Protection

文件：399.01 Kbytes 页数：11 Pages

TOSHIBA

东芝

丝印：3021；WL-OCTR Optocoupler Triac

General Information: Operating Temperature -40 °C up to +100 °C Storage Conditions (for single parts) -55 °C up to +125 °C Storage Conditions (in original packaging)

文件：2.08985 Mbytes 页数：14 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团