| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 mΩ 文件:404.23 Kbytes 页数:10 Pages | RENESAS 瑞萨 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 m 文件:215.04 Kbytes 页数:8 Pages | NEC 瑞萨 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 m 文件:215.04 Kbytes 页数:8 Pages | NEC 瑞萨 | NEC | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 mΩ 文件:404.23 Kbytes 页数:10 Pages | RENESAS 瑞萨 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 mΩ 文件:404.23 Kbytes 页数:10 Pages | RENESAS 瑞萨 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 m 文件:215.04 Kbytes 页数:8 Pages | NEC 瑞萨 | NEC | ||
N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • Motor drive. • Avalanche resistance guarantee. • 10V drive. 文件:60.67 Kbytes 页数:5 Pages | SANYO 三洋 | SANYO | ||
General-Purpose Switching Device Applications Features • Low ON-resistance. • Motor drive. • Avalanche resistance guarantee. • 10V drive. 文件:281.95 Kbytes 页数:5 Pages | SANYO 三洋 | SANYO | ||
isc N-Channel MOSFET Transistor 文件:332.33 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | ||
丝印:D2PAK;Package:TO-263;isc N-Channel MOSFET Transistor 文件:276.82 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC |
技术参数
- Compliance:
Pb-free
- Status:
Active
- Description:
N-Channel Power MOSFET
- Channel Polarity:
N-Channel
- Configuration:
Single
- V(BR)DSS Min (V):
Condition
- VGS Max (V):
20
- VGS(th) Max (V):
3.5
- ID Max (A):
2
- PD Max (W):
80
- RDS(on) Max @ VGS = 10 V(mΩ):
13
- Qg Typ @ VGS = 10 V (nC):
Condition
- Ciss Typ (pF):
380
- Package Type:
D2PAK-3 / TO-263-2
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
60000 |
询价 | |||||
VISHAY/威世 |
23+ |
TO-263 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
TOSHIBA/东芝 |
2022+ |
TO-220 |
12888 |
原厂代理 终端免费提供样品 |
询价 | ||
SANYO |
24+ |
TO-262 |
5000 |
全现原装公司现货 |
询价 | ||
ON |
23+ |
TO-263-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
三年内 |
1983 |
只做原装正品 |
询价 | ||||
RENESAS/瑞萨 |
18+ |
TO-252 |
41200 |
原装正品,现货特价 |
询价 | ||
RENESAS |
20+ |
TO-252 |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
PANASONIC/松下 |
25+ |
TO-263 |
15000 |
一级代理原装现货 |
询价 | ||
ON Semiconductor |
2010+ |
N/A |
704 |
加我qq或微信,了解更多详细信息,体验一站式购物 |
询价 |
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