2SK417

HIGH SPEED SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS.

文件：41.67 Kbytes 页数：1 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=10A@ TC=25℃ · Drain Source Voltage -VDSS=60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.14Ω(Max)@VGS= 10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：297.06 Kbytes 页数：2 Pages

ISC

无锡固电

2SK417

Toshiba

东芝

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Low ON-resistance. • Load switching applications. • Motor drive applications. • Avalanche resistance guarantee.

文件：61.37 Kbytes 页数：5 Pages

SANYO

三洋

N-Channel Power MOSFET

N-Channel Power MOSFET 1500V, 2A, 13Ω, TO-263-2L Features • ON-resistance RDS(on)=10Ω(typ.) • Input capacitance Ciss=380pF (typ.) • 10V drive

文件：298.02 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • ON-resistance RDS(on)=10Ω(typ.) • Input capacitance Ciss=380pF (typ.) • 10V drive

文件：62.75 Kbytes 页数：5 Pages

SANYO

三洋

N-Channel Power MOSFET

N-Channel Power MOSFET 1500V, 2A, 13Ω, TO-263-2L Features • ON-resistance RDS(on)=10Ω(typ.) • Input capacitance Ciss=380pF (typ.) • 10V drive

文件：298.02 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Avalanche resistance guarantee.

文件：63.63 Kbytes 页数：5 Pages

SANYO

三洋

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 m

文件：215.04 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 mΩ

文件：404.23 Kbytes 页数：10 Pages

RENESAS

瑞萨