Silicon N-Channel MOS Type Switching Regulator Applications

Switching Regulator Applications • Small gate charge: Qg= 60 nC (typ.) • Low drain-source ON resistance: RDS (ON)= 0.22 Ω(typ.) • High forward transfer admittance: |Yfs| = 11 S (typ.) • Low leakage current: IDSS= 500 μA (VDS= 600 V) • Enhancement model: Vth= 2.0 to 4.0 V (VDS= 10

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TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

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TOSHIBA

东芝

SWITCHING N-CHANNEL POWER MOSFET

The 2SK3918 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. 1. Low on-state resistance RDS(on)1= 7.5 mΩMAX. (V

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NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3918 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Lo

文件：288.24 Kbytes 页数：10 Pages

RENESAS

瑞萨

MOS Field Effect Transistor

Features Low on-state resistance RDS(on)1=7.5mΩ MAX. (VGS=10V,ID=24A) Low Ciss: Ciss = 1300 pF TYP. 5 V drive available

文件：45.3 Kbytes 页数：1 Pages

KEXIN

科信电子

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3918 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Lo

文件：288.24 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

The 2SK3918 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. 1. Low on-state resistance RDS(on)1= 7.5 mΩMAX. (V

文件：160.26 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3919 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Lo

文件：296.08 Kbytes 页数：10 Pages

RENESAS

瑞萨

MOS Field Effect Transistor

Features Low on-state resistance RDS(on)1=5.6mΩ MAX. (VGS=10V,ID=32A) Low Ciss: Ciss = 2050 pF TYP. 5 V drive available

文件：45.09 Kbytes 页数：1 Pages

KEXIN

科信电子

SWITCHING N-CHANNEL POWER MOSFET

The 2SK3919 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

文件：167.43 Kbytes 页数：8 Pages

NEC

瑞萨