N-channel Enhancement Mode Power MOSFET

Features VDS= 60V, ID= 50A RDS(ON)

文件：779.98 Kbytes 页数：5 Pages

Bychip

百域芯

General-Purpose Switching Device Applications

文件：46.91 Kbytes 页数：4 Pages

SANYO

三洋

General-Purpose Switching Device Applications

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 60mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：330.62 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 60mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：398.47 Kbytes 页数：2 Pages

ISC

无锡固电