Silicon N Channel Power MOS FET Power Switching

Features • Low on-resistance RDS (on) = 4.3 mΩ typ. • 4 V gate drive device • High speed switching

文件：1.41358 Mbytes 页数：11 Pages

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瑞萨

Silicon N Channel Power MOS FET Power Switching

Features • Low on-resistance RDS (on) = 4.3 mΩ typ. • 4 V gate drive device • High speed switching

文件：1.41358 Mbytes 页数：11 Pages

RENESAS

瑞萨

N-Channel 60 V (D-S) 175 째C MOSFET

文件：1.76321 Mbytes 页数：8 Pages

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微碧半导体

Silicon N Channel Power MOS FET Power Switching

Features • Low on-resistance RDS (on) = 4.3 mΩ typ. • 4 V gate drive device • High speed switching

文件：1.41358 Mbytes 页数：11 Pages

RENESAS

瑞萨