SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3431 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1= 5.6 mΩMAX. (VGS= 10 V, ID= 42 A) RDS(on)2= 8.9 mΩMAX. (VGS= 4 V, ID= 42 A) • Low Ciss: Ciss= 6100 pF TY

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NEC

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3431 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 5.6mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.9mΩ MAX. (VGS = 4 V, ID = 42 A) • L

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MOS Field Effect Transistor

Features ● Super low on-state resistance: RDS(on)1=5.6mΩ MAX. (VGS=10V,ID=42A) RDS(on)2=8.9mΩ MAX. (VGS=4V,ID=42A) ● Low Ciss:Ciss = 6100 pF TYP. ● Built-in gate protection diode

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KEXIN

科信电子

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3431 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 5.6mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.9mΩ MAX. (VGS = 4 V, ID = 42 A) • L

文件：214.33 Kbytes 页数：10 Pages

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瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3431 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1= 5.6 mΩMAX. (VGS= 10 V, ID= 42 A) RDS(on)2= 8.9 mΩMAX. (VGS= 4 V, ID= 42 A) • Low Ciss: Ciss= 6100 pF TY

文件：48.6 Kbytes 页数：4 Pages

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3431 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1= 5.6 mΩMAX. (VGS= 10 V, ID= 42 A) RDS(on)2= 8.9 mΩMAX. (VGS= 4 V, ID= 42 A) • Low Ciss: Ciss= 6100 pF TY

文件：48.6 Kbytes 页数：4 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3431 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 5.6mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.9mΩ MAX. (VGS = 4 V, ID = 42 A) • L

文件：214.33 Kbytes 页数：10 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3431 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 5.6mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.9mΩ MAX. (VGS = 4 V, ID = 42 A) • L

文件：214.33 Kbytes 页数：10 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3432 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 4.0mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 6.9mΩ MAX. (VGS = 4 V, ID = 42 A) • L

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RENESAS

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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3432 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance: RDS(on)1= 4.0 mΩMAX. (VGS= 10 V, ID= 42 A) RDS(on)2= 6.9 mΩMAX. (VGS= 4 V, ID= 42 A) •Low Ciss: Ciss= 9500 pF TYP. •Bui

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NEC

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