SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3359 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 28 mΩ MAX. (VGS = 4.5 V, ID = 30 A) • Low Ciss: Ciss = 4900 pF TYP. • Built-

文件：48.34 Kbytes 页数：4 Pages

NEC

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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3359 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 28 mΩ MAX. (VGS = 4.5 V, ID = 30 A) • Low Ciss: Ciss = 4900 pF TYP. • Built-

文件：48.34 Kbytes 页数：4 Pages

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3359 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 28 mΩ MAX. (VGS = 4.5 V, ID = 30 A) • Low Ciss: Ciss = 4900 pF TYP. • Built-

文件：48.34 Kbytes 页数：4 Pages

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3359 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 28 mΩ MAX. (VGS = 4.5 V, ID = 30 A) • Low Ciss: Ciss = 4900 pF TYP. • Built-

文件：48.34 Kbytes 页数：4 Pages

NEC

瑞萨