SILICON N CHANNEL TRANSISTOR

SILICON N CHANNEL TRANSISTOR

文件：92.64 Kbytes 页数：1 Pages

SANYO

三洋

SILICON N CHANNEL TRANSISTOR

ONSEMI

安森美半导体

N CHANNEL JUNCTION TYPE (FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS)

For Low Noise Audio Amplifier Applications ​​​​​​​ • Two devices in a ultra super mini (five pins) package • High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) • High breakdown voltage: VGDS = −50 V • Super low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5

文件：193.43 Kbytes 页数：4 Pages

TOSHIBA

东芝

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

For Low Noise Audio Amplifier Applications ​​​​​​​ • Two devices in a ultra super mini (five pins) package • High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) • High breakdown voltage: VGDS = −50 V • Super low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5

文件：312.28 Kbytes 页数：5 Pages

TOSHIBA

东芝

For Low Noise Audio Amplifier Applications

For Low Noise Audio Amplifier Applications ​​​​​​​ • Two devices in a ultra super mini (five pins) package • High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) • High breakdown voltage: VGDS = −50 V • Super low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5

文件：312.28 Kbytes 页数：5 Pages

TOSHIBA

东芝

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

For Low Noise Audio Amplifier Applications ​​​​​​​ • Two devices in a ultra super mini (five pins) package • High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) • High breakdown voltage: VGDS = −50 V • Super low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5

文件：312.28 Kbytes 页数：5 Pages

TOSHIBA

东芝

For Low Noise Audio Amplifier Applications

For Low Noise Audio Amplifier Applications ​​​​​​​ • Two devices in a ultra super mini (five pins) package • High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) • High breakdown voltage: VGDS = −50 V • Super low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5

文件：312.28 Kbytes 页数：5 Pages

TOSHIBA

东芝

N CHANNEL JUNCTION TYPE (GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS)

GENGERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATION Small Package High Input Impedance : IGSS= -1 nA(Max.) (VGS = -30V) Low Noise :NF =0.5dB(Typ.) (RG = 100KΩ, ㄹ = 120Hz)

文件：192.47 Kbytes 页数：5 Pages

TOSHIBA

东芝

SWITCHING N-CHANNEL POWER MOSFET

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3322 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES ★• Low gate charge : QG= 15 nC TYP.

文件：91.1 Kbytes 页数：8 Pages

NEC

瑞萨

MOS Field Effect Transistor

Features ● Low gate charge QG = 15 nC TYP. (VDD = 450V, VGS = 10 V, ID = 5.5A) ● Gate voltage rating ±30 V ● Low on-state resistance RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 2.8A) ● Avalanche capability ratings

文件：43.37 Kbytes 页数：1 Pages

KEXIN

科信电子