MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on)= 4.4 ΩMAX. (VGS= 10 V, ID= 1.0 A)

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NEC

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(o

文件：347.16 Kbytes 页数：10 Pages

RENESAS

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N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：1.086 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on)= 4.4 ΩMAX. (VGS= 10 V, ID= 1.0 A)

文件：202.85 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(o

文件：347.16 Kbytes 页数：10 Pages

RENESAS

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristic, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(

文件：267.06 Kbytes 页数：10 Pages

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SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3113 is N-channel DMOSFET device that features a low gate charge and excellent switching characteristic, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES •Low on-state resistance RDS(on)= 4.4 ΩMAX. (VGS= 10 V, ID= 1.0

文件：145.2 Kbytes 页数：8 Pages

NEC

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isc N-Channel MOSFET Transistor

文件：331.26 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

文件：1.07641 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION\nThe 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.FEATURES\n•Low on-state resistance\nRDS(on)= 4.4 ΩMAX. (VGS= 10 V, ID= 1.0 A)\n•Low gat •Low on-state resistance\nRDS(on)= 4.4 ΩMAX. (VGS= 10 V, ID= 1.0 A)\n•Low gate charge\nQG= 7.9 nC TYP. (VDD= 450 V, VGS= 10 V, ID= 2.0 A)\n•Gate voltage rating : ±30 V\n•Avalanche capability ratings;

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