2SK3113技术资料参数贸易商科信电子KEXIN-114ic电子网

首页 >2SK3113>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
2SK3113	文件：267.06 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3113isN-channelDMOSFETdevicethatfeatures alowgatechargeandexcellentswitchingcharacteristic,and designedforhighvoltageapplicationssuchasswitching powersupply,ACadapter. FEATURES •Lowon-stateresistance RDS(	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
2SK3113	文件：145.2 Kbytes Page：8 Pages	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The2SK3113isN-channelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristic,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowon-stateresistance RDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
2SK3113	文件：45.43 Kbytes Page：1 Pages	MOS Field Effect Transistor Features Lowon-stateresistanceRDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0A) Lowgatecharge QG=9nCTYP.(VDD=450V,VGS=10V,ID=2.0A) Gatevoltagerating±30V Avalanchecapabilityratings	KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司	KEXIN
2SK3113	文件：398.81 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
2SK3113B	文件：202.85 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The2SK3113BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowon-stateresistance RDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0A)	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
2SK3113B	文件：347.16 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3113BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowon-stateresistance RDS(o	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
2SK3113B-S15-AY	文件：202.85 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The2SK3113BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowon-stateresistance RDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0A)	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
2SK3113B-S15-AY	文件：347.16 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3113BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowon-stateresistance RDS(o	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
2SK3113B-S27-AY	文件：347.16 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3113BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowon-stateresistance RDS(o	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
2SK3113B-ZK-E1-AY	文件：202.85 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The2SK3113BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowon-stateresistance RDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0A)	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
2SK3113B-ZK-E1-AY	文件：1.086 Mbytes Page：9 Pages	N-Channel 650 V (D-S) MOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
2SK3113B-ZK-E1-AY	文件：347.16 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3113BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowon-stateresistance RDS(o	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
2SK3113B-ZK-E2-AY	文件：202.85 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The2SK3113BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowon-stateresistance RDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0A)	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
2SK3113B-ZK-E2-AY	文件：347.16 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3113BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowon-stateresistance RDS(o	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
2SK3113-Z	文件：145.2 Kbytes Page：8 Pages	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The2SK3113isN-channelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristic,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowon-stateresistance RDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
2SK3113-Z	文件：267.06 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3113isN-channelDMOSFETdevicethatfeatures alowgatechargeandexcellentswitchingcharacteristic,and designedforhighvoltageapplicationssuchasswitching powersupply,ACadapter. FEATURES •Lowon-stateresistance RDS(	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
2SK3113-Z	文件：1.07641 Mbytes Page：9 Pages	Power MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
2SK3113-Z	文件：331.26 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
2SK3113-Z	文件：145.2 Kbytes Page：8 Pages	SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3113isN-channelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristic,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowon-stateresistance RDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
2SK3113-Z	文件：1.07641 Mbytes Page：9 Pages	PowerMOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI

12 >>>

详细参数

型号：
2SK3113
制造商：
Renesas Electronics Corporation

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市福田区晶康业电子商行	2SK3113	NEC	20+	SOT252	4000	全新原装,价格优势	询价
深圳市特顺芯科技有限公司	2SK3113	NEC		TO-251	95620		询价
深圳市勤思达科技有限公司	2SK3113	NEC	12+	TO-251	15000	全新原装,绝对正品,公司现货供应。	询价
齐创科技(上海,北京,青岛)有限公司	2SK3113	原厂正品	23+	TO-251	5000	原装正品,假一罚十	询价
深圳好佳好科技有限公司	2SK3113	NEC	1436+	TO-252	30000	绝对原装进口现货可开增值税发票	询价
深圳市博浩通科技有限公司	2SK3113	NEC	23+	TO-251	7600	全新原装现货	询价
深圳市豪迈兴电子有限公司	2SK3113	NEC	2339+		4326	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市科恒伟业电子有限公司	2SK3113	NEC	2016+	TO-251	6523	房间原装进口现货假一赔十	询价
深圳市卓越微芯电子有限公司	2SK3113	NEC	2020+	TO-251	386	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市莱克讯科技有限公司	2SK3113	NEC	2017+	TO252	45288	深圳香港代理原装现货库存(美国-日本-台湾)可开正规增	询价

更多2SK3113供应商更新时间2024-5-1 10:10:00

详细参数

相关规格书

相关库存