SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3113 is N-channel DMOSFET device that features a low gate charge and excellent switching characteristic, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES •Low on-state resistance RDS(on)= 4.4 ΩMAX. (VGS= 10 V, ID= 1.0

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NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristic, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(

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MOS Field Effect Transistor

Features Low on-state resistance RDS(on)=4.4Ω MAX. (VGS=10V,ID=1.0A) Low gate charge QG= 9 nC TYP. (VDD=450V,VGS=10V,ID=2.0A) Gate voltage rating ±30V Avalanche capability ratings

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KEXIN

科信电子

isc N-Channel MOSFET Transistor

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ISC

无锡固电

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION\nThe 2SK3113 is N-channel DMOSFET device that features a low gate charge and excellent switching characteristic, and designed for high voltage applications such as switching power supply, AC adapter.FEATURES\n•Low on-state resistance\nRDS(on)= 4.4 ΩMAX. (VGS= 10 V, ID= 1.0 A)\n•Low gate •Low on-state resistance\nRDS(on)= 4.4 ΩMAX. (VGS= 10 V, ID= 1.0 A)\n•Low gate charge\nQG= 9 nC TYP. (VDD= 450 V, VGS= 10 V, ID= 2.0 A)\n•Gate voltage rating ±30 V\n•Avalanche capability ratings;

Renesas

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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on)= 4.4 ΩMAX. (VGS= 10 V, ID= 1.0 A)

文件：202.85 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(o

文件：347.16 Kbytes 页数：10 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(o

文件：347.16 Kbytes 页数：10 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on)= 4.4 ΩMAX. (VGS= 10 V, ID= 1.0 A)

文件：202.85 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(o

文件：347.16 Kbytes 页数：10 Pages

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