Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.12Ω typ (VGS = 10 V, ID = 1 A) • Low drive current • High speed switching • 4V gate drive devices

文件：43.79 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.12 Ω typ (VGS = 10 V, ID = 1 A) • Low drive current • High speed switching • 4 V gate drive devices.

文件：78.11 Kbytes 页数：7 Pages

RENESAS

瑞萨

Nch Single Power Mosfet 60V 2A 160Mohm Upak/Sc-62

The 2SK2788 is a Nch Single Power Mosfet 60V 2A 160Mohm Upak/Sc-62.

Renesas

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.12 Ω typ (VGS = 10 V, ID = 1 A) • Low drive current • High speed switching • 4 V gate drive devices.

文件：78.11 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.12 Ω typ (VGS = 10 V, ID = 1 A) • Low drive current • High speed switching • 4 V gate drive devices.

文件：78.11 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

文件：82.22 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

文件：82.22 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

文件：82.22 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

文件：82.22 Kbytes 页数：7 Pages

RENESAS

瑞萨