Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.04Ω typ (at VGS = 10 V, ID = 2.5 A) • 4V gate drive devices. • Large current capacitance ID = 5 A

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source

文件：39.5 Kbytes 页数：7 Pages

HITACHIHitachi Semiconductor

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：89.91 Kbytes 页数：8 Pages

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 30V(Min) · Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：309.51 Kbytes 页数：2 Pages

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无锡固电

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source

文件：39.5 Kbytes 页数：7 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：89.91 Kbytes 页数：8 Pages

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瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：89.91 Kbytes 页数：8 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 30V(Min) · Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.52 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source

文件：39.5 Kbytes 页数：7 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：89.91 Kbytes 页数：8 Pages

RENESAS

瑞萨