Silicon N-Channel MOSFET

Features ● Low on-resistance ● RDS = 20 mΩ typ. ● High speed switching ● 4V gate drive device can be driven from 5V source

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科信电子

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 20 mΩ typ. (VGS = 10 V, ID = 15 A) • 4 V gate drive devices. • High speed switching

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Silicon N Channel DV-L MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching

文件：34.87 Kbytes 页数：7 Pages

HITACHIHitachi Semiconductor

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 20 mΩ typ. (VGS = 10 V, ID = 15 A) • 4 V gate drive devices. • High speed switching

文件：88.45 Kbytes 页数：7 Pages

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 10 mΩ typ. • 4 V gate drive devices. • High speed switching

文件：88.75 Kbytes 页数：7 Pages

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 10 mΩ typ. • 4V gate drive devices. • High speed switching

文件：47.52 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 10 mΩ typ. • 4 V gate drive devices. • High speed switching

文件：88.75 Kbytes 页数：7 Pages

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瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 15 mΩ typ • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：93.89 Kbytes 页数：8 Pages

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 15 mΩ typ • High speed switching • 4V gate drive device can be driven from 5V source

文件：49.5 Kbytes 页数：10 Pages

HITACHIHitachi Semiconductor

日立日立公司