| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Avalancheratings | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Avalancheratings | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Avalancheratings | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Interface and switching (30V, 200mA) Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Low-voltagedrive(4V). 4)Easilydesigneddrivecircuits. 5)Easytoparallel. Structure SiliconN-channel MOSFET | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
Silicon N-Channel MOSFET ■Features ●VDS(V)=30V ●ID=0.2A ●RDS(ON) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
Interface and switching (30V, 200mA) Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Low-voltagedrive(4V). 4)Easilydesigneddrivecircuits. 5)Easytoparallel. Structure SiliconN-channel MOSFET | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
N-Channel MOSFET ■Features ●VDS(V)=30V ●ID=0.2A ●RDS(ON) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
Interface and switching (30V, 200mA) Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Low-voltagedrive(4V). 4)Easilydesigneddrivecircuits. 5)Easytoparallel. Structure SiliconN-channel MOSFET | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistance RDS(on)=0.04Ωtyp(atVGS=10V,ID=2.5A) •4Vgatedrivedevices. •Largecurrentcapacitance ID=5A | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistance RDS(on)=0.04Ωtyp(atVGS=10V,ID=2.5A) •4Vgatedrivedevices. •Largecurrentcapacitance ID=5A | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistanceRDS=20mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistanceRDS=20mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistanceRDS=20mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistanceRDS=20mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistanceRDS=20mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistanceRDS=20mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistanceRDS=20mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon N-Channel MOSFET Features ●Lowon-resistance ●RDS=20mΩtyp. ●Highspeedswitching ●4Vgatedrivedevicecanbedrivenfrom5Vsource | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistanceRDS=20mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS |
详细参数
- 型号：
2SK273
- 制造商：
Renesas Electronics Corporation
- 功能描述：
Trans MOSFET N-CH 500V 25A 3-Pin(3+Tab) TO-3P Box
- 制造商：
Renesas
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
2000 |
询价 | ||||||
HIT |
17+ |
TO-3P |
6200 |
询价 | |||
HIT |
16+ |
TO-3P |
10000 |
全新原装现货 |
询价 | ||
HIT |
23+ |
TO-3P |
3000 |
专做原装正品,假一罚百! |
询价 | ||
HIT |
2020+ |
TO-3P |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
日立 |
2021+ |
TO-3P |
6430 |
原装现货/欢迎来电咨询 |
询价 | ||
HITACHI/日立 |
TO-3P |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
HITACHI/日立 |
23+ |
TO-3P |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
HITACHI/日立 |
2022 |
TO-3P |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
日立 |
22+ |
TO-3P |
6000 |
十年配单,只做原装 |
询价 |
相关规格书
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