Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance • High speed switching • Low drive current • Avalanche ratings

文件：51.45 Kbytes 页数：10 Pages

HITACHIHitachi Semiconductor

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance • High speed switching • Low drive current • Avalanche ratings

文件：217.21 Kbytes 页数：10 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance • High speed switching • Low drive current • Avalanche ratings

文件：217.21 Kbytes 页数：10 Pages

RENESAS

瑞萨

丝印：T146；Package：SMT3；Interface and switching (30V, 200mA)

Features 1) Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive (4V). 4) Easily designed drive circuits. 5) Easy to parallel. Structure Silicon N-channel MOSFET

文件：112.67 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：KL；Package：SMT3；Interface and switching (30V, 200mA)

Features 1) Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive (4V). 4) Easily designed drive circuits. 5) Easy to parallel. Structure Silicon N-channel MOSFET

文件：128.06 Kbytes 页数：5 Pages

ROHM

罗姆

Silicon N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 0.2 A ● RDS(ON)

文件：44.05 Kbytes 页数：1 Pages

KEXIN

科信电子

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 0.2 A ● RDS(ON)

文件：1.05582 Mbytes 页数：3 Pages

KEXIN

科信电子

Interface and switching (30V, 200mA)

Features 1) Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive (4V). 4) Easily designed drive circuits. 5) Easy to parallel. Structure Silicon N-channel MOSFET

文件：128.06 Kbytes 页数：5 Pages

ROHM

罗姆

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.04Ω typ (at VGS = 10 V, ID = 2.5 A) • 4V gate drive devices. • Large current capacitance ID = 5 A

文件：46.68 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

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