Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source

文件：39.5 Kbytes 页数：7 Pages

HITACHIHitachi Semiconductor

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：89.91 Kbytes 页数：8 Pages

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 30V(Min) · Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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isc N-Channel MOSFET Transistor

文件：398.15 Kbytes 页数：2 Pages

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：89.91 Kbytes 页数：8 Pages

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Transistors>Switching/MOSFETs

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