2SK2553L-E资料使用说明书批发供应瑞萨-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
2SK2553L-E	文件：96.13 Kbytes Page：9 Pages	Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • RDS(on)= 7 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source Application High speed power switching 文件：96.13 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SK2553S	文件：41.17 Kbytes Page：7 Pages	Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • RDS(on)= 7 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source Application High speed power switching 文件：41.17 Kbytes 页数：7 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SK2553S	文件：386.01 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor 文件：386.01 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
2SK2553STL-E	文件：96.13 Kbytes Page：9 Pages	Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • RDS(on)= 7 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source Application High speed power switching 文件：96.13 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS

更多2SK2553L-E供应商更新时间2026-4-18 11:01:00