DC−DC Converter, Relay Drive and Motor Drive

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TOSHIBA

东芝

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 25K2541 is a switching device which can be driven directly by a 15V power source. ‘The MOS FET has excellent switching characteristics and is suitable for use as a high-speed switching device in digital circuit

文件：446.72 Kbytes 页数：9 Pages

RENESAS

瑞萨

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING?

DESCRIPTION The 2SK2541 is a switching device which can be driven directly by a 1.5 V power source. The MOS FET has excellent switching characteristics and is suitable for use a high-speed switching device in digital circuits. FEATURES ● Can be driven by a 1.5 V power source. ● Not necessary

文件：294.11 Kbytes 页数：6 Pages

NEC

瑞萨

N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, SWITCHING REGULATOR APPLICATIONS)

Switching Regulator Applications ● 4-V gate drive ● Low drain−source ON-resistance : RDS (ON) = 0.75 Ω (typ.) ● High forward transfer admittance : |Yfs| = 7.0 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) ● Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：286.12 Kbytes 页数：5 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, SWITCHING REGULATOR APPLICATIONS)

Switching Regulator Applications Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：285.98 Kbytes 页数：5 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=6.0A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.25Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.04 Kbytes 页数：2 Pages

ISC

无锡固电

N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

DC−DC Converter, Relay Drive and Motor Drive Applications ● 2.5-V gate drive ● Low drain−source ON resistance : RDS (ON) = 0.29 Ω (typ.) ● High forward transfer admittance : |Yfs| = 3.0 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 16 V) ● Enhancement mode : Vth = 0.5 to 1.1 V (

文件：273.66 Kbytes 页数：5 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件：296.44 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N Channel MOS Type Switching Regulator Applications

文件：705.18 Kbytes 页数：6 Pages

TOSHIBA

东芝