N-channel MOS-FET

> Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters

文件：124.22 Kbytes 页数：2 Pages

FUJI

富士通

N-channel MOS-FET

- High Current\n- Low On-Resistance\n- No Secondary Breakdown\n- Low Driving Power\n- High Forward Transconductance Applications\n- Motor Control\n- General Purpose Power Amplifier\n- DC-DC converters;

FUJI

富士通

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 30A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 55mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：345.83 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：400.42 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel MOS-FET

> Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters

文件：124.22 Kbytes 页数：2 Pages

FUJI

富士通